Boost automotive power designs with new STPOWER MDmesh DM9 super-junction silicon MOSFETs

使用新型STPOWER MDmesh DM9超結(jié)硅MOSFET改進(jìn)汽車電源設(shè)計(jì)

STPOWER MDmesh DM9 AG automotive-grade 600V/650V super-junction MOSFETs deliver high efficiency and ruggedness for on-board chargers and DC/DC converters in both hard- and soft-switching topologies.

針對硬開關(guān)和軟開關(guān)拓?fù)渲械能囕d充電器和DC/DC轉(zhuǎn)換器，STPOWER MDmesh DM9 AG車規(guī)級600V/650V超結(jié)MOSFET提供了出色的效率和穩(wěn)健性。

The standout feature of the MDmesh DM9 AG series is its RDS(on) per die area coupled with a minimal gate charge. This combination leads to lower energy losses and superior switching performance, setting a new benchmark figure of merit. The latest technology in the series ensures a tighter gate-source threshold voltage (VGS(th)) spread, which sharpens the switching capabilities of the MOSFETs, resulting in lower turn-on and turn-off losses.

MDmesh DM9 AG系列的突出特點(diǎn)是理想的單位晶片面積RDS(on) 和較小的柵極電荷。這一優(yōu)勢帶來了更低的能量損失和卓越的開關(guān)性能，樹立了全新的基準(zhǔn)品質(zhì)因數(shù)。該系列所運(yùn)用的新技術(shù)帶來了更加緊密的柵源閾值電壓 (VGS(th)) 分布，由此提高了MOSFET的開關(guān)能力，并降低了導(dǎo)通和關(guān)斷損耗。

Moreover, these devices offer improved body-diode reverse recovery characteristics, thanks to a new optimized process that not only enhances the reverse recovery but also increases the MOSFETs' overall ruggedness. The diode's low reverse-recovery charge (Qrr) and fast recovery time (trr) position the MDmesh DM9 AG series as an ideal choice for phase-shift zero-voltage switching topologies that require the highest levels of efficiency.

此外，得益于全新的優(yōu)化工藝，該系列器件提供了更佳的體二極管反向恢復(fù)特性——不僅增強(qiáng)了反向恢復(fù)，還提高了MOSFET的整體穩(wěn)健性。二極管的低反向恢復(fù)電荷 (Qrr) 和快速恢復(fù)時(shí)間 (trr) 使MDmesh DM9 AG系列成為需要高效率的相移零電壓開關(guān)拓?fù)涞睦硐脒x擇。

The series also provides a variety of through-hole and surface-mount packages, enabling designers to achieve a compact form factor without compromising on power density and system reliability. The TO-247 LL (long-lead) package is a popular through-hole option that facilitates easy integration into existing designs, while surface-mount packages like the H2PAK-2 (2 leads) and H2PAK-7 (7 leads) are tailored for efficient bottom-side cooling when used with thermal substrates or PCBs equipped with thermal vias. Additionally, the HU3PAK and ACEPACK? SMIT topside-cooled surface-mount packages are available for those seeking alternative cooling solutions.

該系列還提供各種通孔和表面安裝封裝，使設(shè)計(jì)者能夠在不影響功率密度和系統(tǒng)可靠性的情況下，實(shí)現(xiàn)緊湊的外形尺寸。TO-247 LL（長引線）封裝是一種流行的通孔選項(xiàng)，有助于實(shí)現(xiàn)現(xiàn)有設(shè)計(jì)的輕松集成，而H2PAK-2（2引線）和H2PAK-7（7引線）等表面貼裝封裝則專為高效底側(cè)冷卻定制，用于搭配熱基板或PCB（設(shè)有熱通孔）使用。此外，對于尋求替代性冷卻解決方案的用戶，也可以選擇HU3PAK和ACEPACK? SMIT頂部冷卻表面貼裝封裝。

The first device to be introduced in the STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device that showcases a 76mΩ typical RDS(on) in an H2PAK-2 package.

STPOWER MDmesh DM9 AG系列推出的首款器件是STH60N099DM9-2AG。這是一款符合27A AEC-Q101標(biāo)準(zhǔn)的N溝道600V器件，采用H2PAK-2封裝，具有76mΩ的典型RDS(on)。

ST is committed to expanding this family to include a full range of devices, covering a broad array of current ratings and on-resistances from 23mΩ to 150mΩ, ensuring that there's a suitable component for a wide variety of automotive power applications.

意法半導(dǎo)體致力于將該系列擴(kuò)展至全器件系列，涵蓋從23mΩ到150mΩ的各種電流額定值和導(dǎo)通電阻，確保相關(guān)組件能夠適應(yīng)各種汽車電源應(yīng)用。