意法半導體使用新型STPOWER MDmesh DM9超結硅MOSFET改進汽車電源設計
Boost automotive power designs with new STPOWER MDmesh DM9 super-junction silicon MOSFETs
使用新型STPOWER MDmesh DM9超結硅MOSFET改進汽車電源設計
STPOWER MDmesh DM9 AG automotive-grade 600V/650V super-junction MOSFETs deliver high efficiency and ruggedness for on-board chargers and DC/DC converters in both hard- and soft-switching topologies.
針對硬開關和軟開關拓撲中的車載充電器和DC/DC轉換器,STPOWER MDmesh DM9 AG車規(guī)級600V/650V超結MOSFET提供了出色的效率和穩(wěn)健性。
The standout feature of the MDmesh DM9 AG series is its RDS(on) per die area coupled with a minimal gate charge. This combination leads to lower energy losses and superior switching performance, setting a new benchmark figure of merit. The latest technology in the series ensures a tighter gate-source threshold voltage (VGS(th)) spread, which sharpens the switching capabilities of the MOSFETs, resulting in lower turn-on and turn-off losses.
MDmesh DM9 AG系列的突出特點是理想的單位晶片面積RDS(on) 和較小的柵極電荷。這一優(yōu)勢帶來了更低的能量損失和卓越的開關性能,樹立了全新的基準品質因數(shù)。該系列所運用的新技術帶來了更加緊密的柵源閾值電壓 (VGS(th)) 分布,由此提高了MOSFET的開關能力,并降低了導通和關斷損耗。
Moreover, these devices offer improved body-diode reverse recovery characteristics, thanks to a new optimized process that not only enhances the reverse recovery but also increases the MOSFETs' overall ruggedness. The diode's low reverse-recovery charge (Qrr) and fast recovery time (trr) position the MDmesh DM9 AG series as an ideal choice for phase-shift zero-voltage switching topologies that require the highest levels of efficiency.
此外,得益于全新的優(yōu)化工藝,該系列器件提供了更佳的體二極管反向恢復特性——不僅增強了反向恢復,還提高了MOSFET的整體穩(wěn)健性。二極管的低反向恢復電荷 (Qrr) 和快速恢復時間 (trr) 使MDmesh DM9 AG系列成為需要高效率的相移零電壓開關拓撲的理想選擇。
The series also provides a variety of through-hole and surface-mount packages, enabling designers to achieve a compact form factor without compromising on power density and system reliability. The TO-247 LL (long-lead) package is a popular through-hole option that facilitates easy integration into existing designs, while surface-mount packages like the H2PAK-2 (2 leads) and H2PAK-7 (7 leads) are tailored for efficient bottom-side cooling when used with thermal substrates or PCBs equipped with thermal vias. Additionally, the HU3PAK and ACEPACK? SMIT topside-cooled surface-mount packages are available for those seeking alternative cooling solutions.
該系列還提供各種通孔和表面安裝封裝,使設計者能夠在不影響功率密度和系統(tǒng)可靠性的情況下,實現(xiàn)緊湊的外形尺寸。TO-247 LL(長引線)封裝是一種流行的通孔選項,有助于實現(xiàn)現(xiàn)有設計的輕松集成,而H2PAK-2(2引線)和H2PAK-7(7引線)等表面貼裝封裝則專為高效底側冷卻定制,用于搭配熱基板或PCB(設有熱通孔)使用。此外,對于尋求替代性冷卻解決方案的用戶,也可以選擇HU3PAK和ACEPACK? SMIT頂部冷卻表面貼裝封裝。
The first device to be introduced in the STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device that showcases a 76mΩ typical RDS(on) in an H2PAK-2 package.
STPOWER MDmesh DM9 AG系列推出的首款器件是STH60N099DM9-2AG。這是一款符合27A AEC-Q101標準的N溝道600V器件,采用H2PAK-2封裝,具有76mΩ的典型RDS(on)。
ST is committed to expanding this family to include a full range of devices, covering a broad array of current ratings and on-resistances from 23mΩ to 150mΩ, ensuring that there's a suitable component for a wide variety of automotive power applications.
意法半導體致力于將該系列擴展至全器件系列,涵蓋從23mΩ到150mΩ的各種電流額定值和導通電阻,確保相關組件能夠適應各種汽車電源應用。