250W MasterGaN reference design fast-tracks compact, efficient industrial power supplies

250W MasterGaN參考設(shè)計(jì)快速跟蹤緊湊、高效的工業(yè)電源

Accelerating the design of gallium-nitride (GaN) power supplies (PSUs) that deliver superior efficiency and power density, STMicroelectronics has launched the EVL250WMG1L resonant-converter reference design based on the MasterGaN1L System-in-Package (SiP).

為提供卓越的效率和功率密度，意法半導(dǎo)體加快了氮化鎵 (GaN) 電源 (PSU) 的設(shè)計(jì)進(jìn)程，推出了基于MasterGaN1L系統(tǒng)級(jí)封裝 (SiP) 的EVL250WMG1L諧振轉(zhuǎn)換器參考設(shè)計(jì)。

ST’s MasterGaN SiPs combine GaN power transistors with gate drivers specially optimized to ensure fast and perfectly controlled switching. Using these SiPs in place of an equivalent network of discrete components helps maximize performance and reliability while also accelerating design and saving PCB space.

意法半導(dǎo)體的MasterGaN-SiPs將GaN功率晶體管與經(jīng)特殊優(yōu)化的柵極驅(qū)動(dòng)器相結(jié)合，以確保開(kāi)關(guān)快速且受控。使用此類(lèi)SiP代替分立器件的等效網(wǎng)絡(luò)有助于增強(qiáng)性能和可靠性，同時(shí)加速設(shè)計(jì)并節(jié)省PCB空間。

The new reference design targets industrial applications where space is limited and efficiency is critical. Combining the MasterGaN1L, which contains two 650V 150m? GaN FETs, with ST’s L6599A resonant controller, the PSU achieves peak efficiency over 94% and operates without heatsinks on the primary side. Also leveraging ST’s SRK2001A synchronous-rectification controller, the unit has a compact overall footprint of 80mm x 50mm and outstanding power density of 34 Watts per cubic inch (W/inch^3).

全新的參考設(shè)計(jì)針對(duì)的是空間有限但效率至關(guān)重要的工業(yè)應(yīng)用。結(jié)合MasterGaN1L（含兩個(gè)650V 150m GaN-FET，采用意法半導(dǎo)體的L6599A諧振控制器），PSU的峰值效率超過(guò)94%，且能在初級(jí)側(cè)無(wú)散熱器的情況下運(yùn)行。該裝置還利用了意法半導(dǎo)體的SRK2001A同步整流控制器，80mm x 50mm的整體尺寸十分緊湊，功率密度高達(dá)34 W/inch^3。

The PSU can deliver up to 10A output current, equivalent to 250W at 24Vdc, while also having standby current consumption below 1μA for excellent energy saving. Protection features built into the L6599A and SRK2001A ensure resilience against overcurrent, short-circuit and overvoltage, while input-voltage monitoring ensures correct startup and provides under-voltage lockout.

PSU可提供高達(dá)10A的輸出電流，相當(dāng)于24Vdc下的250W，同時(shí)待機(jī)電流消耗低于1μA，擁有出色的節(jié)能效果。L6599A和SRK2001A內(nèi)置的保護(hù)功能可確保對(duì)過(guò)電流、短路和過(guò)電壓的彈性保護(hù)，而輸入電壓監(jiān)測(cè)則可確保啟動(dòng)正確并提供欠壓鎖定功能。

Key features

關(guān)鍵特性

High efficiency and compact solution for DC-DC conversion using MasterGaN1L

緊湊的高效率解決方案，面向使用MasterGaN1L轉(zhuǎn)換

Output voltage: 24 V

輸出電壓：24 V

Output power: up to 250 W

輸出功率：高達(dá)250 W

Nominal input voltage: 400 V +/- 10%

標(biāo)稱(chēng)輸入電壓：400 V +/- 10%

Efficiency: > 92%

效率：> 92%

Outputs protected against short-circuit and overcurrent

輸出具有短路和過(guò)電流保護(hù)

Input voltage monitor for correct sequencing as D2D converter, and brown-out protection

輸入電壓監(jiān)控用于管理正確的D2D轉(zhuǎn)換器序列，并具有欠壓保護(hù)功能

Board size: 80 x 50 (W x H) mm. Maximum components height: 30 mm

板子尺寸：80 x 50 (W x H) mm。最大組件高度：30 mm

WEEE and RoHS compliant

符合WEEE和RoHS標(biāo)準(zhǔn)

The EVL250WMG1L is available now, fully built and ready for evaluation, for $250.00. Comprehensive related documentation is published on the product page to help system designers accelerate their GaN power projects.

EVL250WMG1L現(xiàn)已上市，整套預(yù)裝系統(tǒng)可直接進(jìn)行測(cè)試驗(yàn)證，每件售價(jià)250.00美元。產(chǎn)品頁(yè)面上發(fā)布了全面的相關(guān)文檔，以幫助系統(tǒng)設(shè)計(jì)者加快GaN電源項(xiàng)目。